Executive Summary : | The proposal aims to develop radiation hardened devices for space, nuclear plants, and biomedical devices, enhancing machine learning capabilities with high-speed computation. The radiation hardened device design can be used to design radiation-hardened circuits. The project will address the design of Radiation hard Memory macro cells with IMC capability using Nanosheet Transistors for IoT and AI/ML applications. The project includes an atomicistic simulation and modeling framework for Nanosheet FETs, an in-depth analysis to identify the impact of Total Ionizing Dose (TID) and single Event Upsets/Transients (sET/sEU) on the Nanosheet FETs, a radiation hardened standard cell library with 440 cells and memory maco, a design of Near Threshold Voltage radiation hardened standard cells for data-intensive IoT and AI/ML applications, and an efficient tool for characterization of radiation hard NTV standard cells. |