Research
Title : | Low- temperature epitaxial growth of high mobility ge1-xsnx channel material for pt/tin/high-k/GeOXNY/Ge1-XSnX/Ge/Si transistor to the integration of next generation CMOS and optoelectronics device on cost effective Si platform |
Area of research : | Physical Sciences |
Focus area : | Optoelectronics device |
Principal Investigator : | Dr. Satinder Kumar Sharma, Associate Professor, School of Computing & Electrical Engineering, Indian Institute of Technology (IIT) Mandi, Himachal Pradesh |
Timeline Start Year : | 2019 |
Timeline End Year : | 2021 |
Contact info : | satinder@iitmandi.ac.in |
Details
Total Budget (INR): | 6,57,814 |
Organizations involved
Implementing Agency : | Institute of Technology (IIT) Mandi, Himachal Pradesh Funding Agency :Department of Science and Technology (DST) | |