Executive Summary : | Ga2O3, a wide bandgap semiconductor with a large breakdown field, has gained interest for high-power devices and solar-blind photodetectors. However, doping Ga2O3 as p-type with shallow acceptors is challenging. III-nitride semiconductors, which can be easily doped in both n- and p-type, could provide a unique device architecture. Metalorganic Chemical Vapor Deposition (MCVD) is still in its infancy for producing high-quality hetero-epitaxial oxide films, but molecular beam epitaxy is promising for future mass production and nitride/oxide heterostructure fabrication.
This project aims to synthesize and study new materials and heterostructures based on group-IIIAl, Ga, In-oxide, and nitride compounds, primarily AlxGa1-x2O3/AlyGa1-yN, using the MOCVD technique. The development of technological approaches will enhance the performance of high-power electronics, including SBD, MOSFET, HEMT, and high-sensitivity solar-blind photodetectors. The project will develop mathematical modeling for growth, new technological methods for high-quality material growth, and theoretical calculations for power devices and photodetectors. The project targets high power density of SBD transistors, MOSFETs, HEMTs, and solar-blind photodetectors, with potential applications in energy-efficient high power switching diodes and MESFETs. |