Executive Summary : | Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are widely studied due to their potential in various applications, including optoelectronics, sensing, catalysis, energy storage, memristor, and quantum devices. Defect engineering in these materials is crucial for their full potential. However, precise control over defects poses challenges, such as the need for newer approaches and the growth of large area monolayers or heterostructures. The proposed work focuses on Ws2 and Mos2-based 2D materials and investigates defect engineering aspects for memristor devices. The study explores various approaches to create defects, including CVD growth, post-growth chemical methods, and physical methods like ion milling, plasma, and microwave. The study also investigates the actual defect-mediated mechanisms responsible for memristor functions, such as filament formation, vacancy migration, phase transition, and charge trapping. The main objective is to use defects as a platform to induce multiple functionalities in memristors and to optimize defects by comparing the performance and mechanics of 2D materials. |