Research
Title : | Quantum materials for memory device applications: Materials to Devices |
Area of research : | Material Sciences |
Focus area : | Quantum Materials |
Principal Investigator : | Dr. Ranjit Vilas Kashid, Centre For Materials For Electronics Technology, Maharashtra Panchawati |
Timeline Start Year : | 2023 |
Timeline End Year : | 2025 |
Contact info : | ranjitkash@gmail.com |
Equipments : | Mini probe station Thermal evaporation system Weiging Balance Digital millimetre |
Details
Executive Summary : | The Von Neumann bottleneck which is the separation between memory and central processing unit (CPU) in traditional computers is facing challenges due to massive data processing [1]. These bottlenecks can be addressed by fabricating complementary two and three-terminal devices with built-in non-volatile memory such as memristors, floating gate memories etc. Here in this proposal, we propose to (a) synthesize large area Quantum Materials like MX2 (M: Mo, W and X: S, Se) using the CVD/ALD route (b) dry/wet transfer of monolayer / a few layers to fabricate heterostructures, (c) fabricate memristive devices in discrete and crossbar architecture (d) Perform room temperature electrical measurements to demonstrate memory application. |
Total Budget (INR): | 30,03,545 |
Organizations involved
Implementing Agency : | Centre For Materials For Electronics Technology, Panchawati, Maharashtra Funding Agency :Anusandhan National Research Foundation/ Science and Engineering Research Board | Source :Anusandhan National Research Foundation/Science and Engineering Research Board (SERB), DST 2023-24 | |