Executive Summary : | Topological nodal-line semimetals offer a promising platform for exploring novel phenomena, such as band crossings along the closed loop carrying the Berry phase, a torus-shaped Fermi surface due to deviating Fermi energy, and drumhead-like surface states induced by the band topology. These unique properties are predicted to lead to unusual charge and spin transport events, such as weak localization, spin-polarization, large magnetoresistance, and temperature variation in resistivity. Transport measurements provide distinct benefits over ARPES and STM, as they allow for the detailed design and fabrication of 2D or 3D electronic devices and appropriate field manipulations. The nontrivial band topology of topological insulators and topological nodal-line semimetals controls anomalous transport responses, which is essential for advanced electronics and spintronics applications. The SdH (Subnikov de-Hass) oscillations in transport measurements have milli-electron volt resolution, allowing for more precise realization of exotic topological phases. Despite the study of numerous materials, such as CaT X, ZrSiS, SrZnSb2, HoSbTe, ZrGeSe, NaAlGe, SnxNbSe2−δ, SrAs3, GdSbTe, and InBi, the lack of appropriate materials is a significant barrier to understanding the special and peculiar transport processes of nodal-line fermions. Understanding the nodal-line fermions is crucial for future technological advancements, particularly in topologically protected quantum communications and understanding their fundamental behavior. This study proposes synthesizing and characterizing the structural and electrical transport properties of Nb3GeTe6, Ca2Sn6Zn3, CaSnZn, and other new/different compositions of nodal-line fermions single crystals. |