Executive Summary : | Perovskite oxides have numerous potential applications in technology, including spintronics, storage information, logic, and sensors. Controllable properties are crucial for achieving these applications. Chemical doping is an effective method to modulate the properties of perovskite oxides, with anion substitution being less explored due to lack of control. This project aims to expand RF sputtering technology to prepare new perovskite oxynitride thin films (BaTiO3-xNx and SrTiO3-xNx films) and demonstrate the enhancement of ferroic properties at room temperature through anion-doping (nitrogen doping) engineering. The approach involves incorporating nitrogen in oxygen sublattice, improving hybridization between Ti and coordinated anions, driving stronger polar distortion, and causing higher ferroelectric polarization and electrical transport in BaTiO3-xNx and SrTiO3-xNx. This results in a significant improvement in ferroic functionalities. High-temperature ferroelectric applications require evaluating the high temperature stability of ferroelectricity. The team will conduct research on oxynitride thin films using reactive sputtering technique in N2-O2 growth atmosphere, fabricate devices, and perform high efficiency characteristics such as ferroelectricity, dielectric permittivity, and transport of anion doped films. |