Research
Title : | Computational study of the role of elastic anisotropy surface stress and Compositional seggregation in Ge-Si coherent heteroepitaxial growth |
Area of research : | Physical Sciences |
Focus area : | Ge-Si Coherent heteroepitaxial growth |
Principal Investigator : | Dr. Madhav Ranganathan, Associate Professor, Department of Chemistry, Indian Instiute of Technology (IIT), Kanpur, Uttar Pradesh, 208016 |
Timeline Start Year : | 2016 |
Contact info : | madhavr@iitk.ac.in |
Details
Total Budget (INR): | 24,44,200 |