Research

Physical Sciences

Title :

Computational study of the role of elastic anisotropy surface stress and Compositional seggregation in Ge-Si coherent heteroepitaxial growth

Area of research :

Physical Sciences

Focus area :

Ge-Si Coherent heteroepitaxial growth

Principal Investigator :

Dr. Madhav Ranganathan, Associate Professor, Department of Chemistry, Indian Instiute of Technology (IIT), Kanpur, Uttar Pradesh, 208016

Timeline Start Year :

2016

Contact info :

Details

Total Budget (INR):

24,44,200

Organizations involved