Research

Physical Sciences

Title :

Development of InAIN/GaN high electron mobility transistor prototype for mm-wave electronic applications

Area of research :

Physical Sciences

Focus area :

International Bilateral Cooperation (IBC)

Principal Investigator :

Dr. B. Sarkar Indian Institute of Technology (Roorkee ) Uttarakhand

Timeline Start Year :

2020

Timeline End Year :

2021

Details

Total Budget (INR):

5,64,000

Organizations involved