Executive Summary : | Semiconductor devices, such as MOSFETs and HEMTs, are crucial in various applications such as wireless communication systems, mobile devices, integrated circuits, and defense systems. Recently, research has focused on the realization of Junctionless Transistors (JLTs) due to their simple design and miniaturization possibilities over conventional MOSFETs. JLTs eliminate problems such as threshold-adjust and low drain-source, leading to the possibility of pocket implants. The main advantage of JLTs is that no n-n, p-p, or p-n junction is required for transistor action. JLTs have been proposed in recent decades, including Tunnel FET, Single Gate, Thin Film, Double Gate, and FinFET. They have an edge as the subthreshold slope can be reduced below 60 mV/dec, leading to faster switching capability and low power operation. JLT structures have been developed for use in microwave power amplifiers and switching electronics signals in electronic devices. India is still dependent on foreign input for semiconductor chips, and the government is focusing on establishing the semiconductor industry in the country. The proposal aims to fabricate a GaN-based junctionless transisitor integrated with ferroelectric HZO in the gate stack, with specific objectives including growth and optimization of HZO and dielectric layer Al2O3 thin film, embedding HZO in the gate stack, studying metal electrodes for gate, drain, and source contacts, and conducting electrical measurements and validation using theoretical modeling/simulation. |
Co-PI: | Dr. Abhinav Kranti, Indian Institute Of Technology (IIT) Indore, Madhya Pradesh-453552, Dr. Monika Tomar, Miranda House, Delhi-110007, Prof. Arijit Chowdhuri, Acharya Narendra Dev College, Delhi-110019 |