Executive Summary : | The demand for photodetectors (PDs) is increasing in various fields, including wireless communication, flame detection, oil spill detection, missile detection, imaging, and medical communication. Narrowband UV photodetectors are ideal for image sensor systems as they do not require a filter for spectrum discrimination. High-performance PDs are desirable for detecting UV radiation, excluding visible and NIR regions. Nanofabrication technologies have led to the use of beta-Ga2O3 in deep UV PDs due to its wide bandgap and unique optoelectronic properties. The introduction of metal nanoparticles like Ag can increase device absorption by plasmonic light absorption. This NP can be manipulated in two-terminal switching devices for next-generation memory devices, acting as an active layer for charge storage with fast switching response and good stability. The fabrication of LiGaO2 and Ga2O3 thin films will be done using solution process techniques, reducing fabrication costs. |