Research

Physical Sciences

Title :

Tuning of Structural, Optical and Photoluminescence properties of Boron Nitride Quantum Dots for LED and Wearable displays: Influence of dopant (Mg, Mn, Zn and Ca)

Area of research :

Physical Sciences

Principal Investigator :

Dr. sakthivel pandurengan, Karpagam Academy Of Higher Education, Tamil Nadu

Timeline Start Year :

2024

Timeline End Year :

2027

Contact info :

Details

Executive Summary :

Tailoring the optical band gap of the semiconductors becomes the most curious research now because wide band gap semiconductors possess the ability to work in high temperatures, high voltage and high switching speeds. Since quantum dots (QDs) have many advantages over the other dimensions of the same material, It is preferred to fabricate LEDs, display devices, sensors, etc. As Boron Nitride quantum dots (BNQDS) exhibit wide band gap and optimum quantum yields, It is chosen as a host material. The transition metal (TM) ions incorporation will tune the existing properties of the host; hence Mg, Mn, Zn and Ca ions are selected as the dopant. Despite the fact that there are other ways to make BNQDs, the facile hydrothermal technique is suggested since it can be easily scaled up for mass production by manipulating a number of parameters. The selected dopants exhibit different colour emissions with the doping of various combinations of materials. It is expected for possible tuning of particle size to get optical band gap and quantum yields for a wide range with the help of TM ions doping with different concentrations. The need for White LED is rapidly increasing in light industries. By optimizing the parameters of the selected materials it is achievable to provide materials for white emission. The proposed material will exhibit a wide band gap, high quantum yield and large band of emission for tuning the performance of optoelectronic devices like LED, Sensor and displays.

Total Budget (INR):

18,30,000

Organizations involved