Executive Summary : | Resistive memory switching (RMS) has become prominent since Williams and Strukov's ground-breaking work in 2008. The exponential growth of digital information has paved the way for developing new storage technologies and the miniaturization of devices. Organic resistive memory devices have recently drawn much attention due to the rising demand for high-density data storage, low power consumption, and mechanical flexibility. Organic molecules outperform polymeric semiconductors in terms of well-defined molecular structure, high solubility, simplicity in purification, and solution deposition processes that facilitate easy fabrication. The resistive switching memory phenomenon happens through five mechanisms: charge transfer, charge trapping, conformational change, redox reaction, and filamentary conduction. Charge transfer is a typical mechanism in donor-acceptor systems under an applied electric field. Charge trapping involves trapping charge carriers into the trapping centers as the voltage increases. In this project, it is proposed to synthesize new quinoline-based organic semiconducting molecules for high-performance resistive memory device applications. The molecules are designed to have better charge transfer and charge traps. The ferrocene series is designed to have the good memory performance by redox mechanism. The proposal is made ultimately to have high performing and stable memory devices. |