Executive Summary : | India aims to double its power output by 2030 and tackle the issue of semi-conductor shortage. The project focuses on developing an efficient Magnetic Random-Access Memory (MRAM), a non-volatile, low-power-consuming, and fast computing memory. The proposal focuses on replacing the writing channels/nodes with the semiconductor heterostructure of n-AlGaAs/GaAs, which is known for its structural inversion asymmetry (SIA) effect and dominant spin-orbit coupling (SOC). This results in a better, faster, and more efficient MRAM. The study will be based on simulations such as NEGF, Boltzmann transport equation, and many-body density matrix formalism. The Landau-Liftshitz-Gilbert (LLG) equation will be solved to obtain the desired magnetization alignment in the proposed device. The success of this project would contribute to magnetic memory research and development. The proposal is practical from an experimental point of view and the team plans to seek experimental collaboration to develop the proposed devices. They also see the potential for industrial participation in the project. |