Executive Summary : | The project aims to synthesize and characterize CdIn2Se4 powder, PbZr0.52Ti0.48O3, and Ba0.4Sr0.6TiO3, and deposition CdIn2Se4 films on quartz glass, sodium chloride, and copper grid substrates for their structural, optical, and electrical parameters. The fabricated devices will be studied for their resistive memory switching behavior, with a high ON to OFF ratio, ample retention time, and good endurance. Theoretical models such as Fowler-Nordheim tunnelling, Poole-Frenkel emission, Interface-limited Schottky emission, and space charge limited conduction will be discussed to understand the conduction mechanism's physical origin. The research will be implemented for prototype use in electronic industries and potentially executed at a large scale for the betterment of society.
The synthesis of CdIn2Se4, PbZr0.52Ti0.48O3, and Ba0.4Sr0.6TiO3 will be conducted in the laboratory, and the materials will be characterized using various techniques. The results of electrical characterizations, current-voltage, capacitance-voltage, Hall effect, and standard reported values will be used to develop a band diagram for a semiconducting thin film memory switching device. The findings will unlock the way for further research, as the putative semiconducting material CdIn2Se4 has never been asserted for its memory switching applications. |