Executive Summary : | This project proposal aims to utilize the optical properties of GaAs quantum dots (QDs) grown on GaAs substrate using molecular beam epitaxy (MBE). These dots, created by local droplet-etched nanoholes in the AlGaAs barrier, offer controlled dot size and emission energy, making them a suitable source for quantum photonics. They outperform InAs QDs due to their higher oscillator strengths and smaller nuclear spin of Ga-isotopes. The popularity of GaAs dot is due to its on-demand supply of single photons, which is essential for quantum communication and computation schemes. The proposal proposes using electrically pumping a single QD instead of optical one, using a p-i-n diode containing GaAs QDs. GaAs dots are typically 6-7 nm tall and emit at approximately 780 nm, crucial for quantum memory applications. The project aims to establish electrically pumped GaAs QD-based single dot spectroscopy and single photon characterization technique in IIT Delhi for the first time in India. |