Research
Title : | GaN-Based Transistors with unity power gain frequency beyond 100 GHz |
Area of research : | Physical Sciences |
Principal Investigator : | Dr. Dipankar Saha, Indian Institute Of Technology (IIT) Bombay, Maharashtra |
Timeline Start Year : | 2023 |
Timeline End Year : | 2026 |
Contact info : | dipankarsaha@iitb.ac.in |
Equipments : | ALD |
Details
Executive Summary : | GaN-based high electron mobility transistors have been proven to be the technology for all RF high power applications. It has already marked its presence up to Ka-band applications. Aggressive efforts are now directed towards the realization of W band applications, which require transistors beyond 100 GHz unit operating frequency. This frequency domain is now ruled mostly by InP devices, which suffer many problems, including low output power. This proposal proposes to bridge this profound gap and bring out a solution through the engineering of the heterostructure, device fabrication, and processing technologies. |
Total Budget (INR): | 78,32,000 |
Organizations involved
Implementing Agency : | Indian Institute Of Technology (IIT) Bombay, Maharashtra Funding Agency :Anusandhan National Rsearch Foundation (ANRF)/Science and Engineering Research Board (SERB) | Source :Anusandhan National Research Foundation/Science and Engineering Research Board (SERB), DST 2023-24 | |