Patents
A process of making Indium Tin Oxide (ITO) precursor (concentration, 6-10 wt% equivalent oxide with In : Sn = 96:04 to 84:16) and dip coated microwave assisted ITO films on soda lime silica glass therefrom which comprises the preparation of paste like material based ITO precursor of hydroxo bridged In(llI) and Sn(IV) and Acetylacetonato complexed species of In(III), deposition of precursor layer by the dipping process (4-10 em/min withdrawal speed) onto cleaned glass substrate (maximum dimensions, 300mm x 300mm, 2-5 mm thickness), initial baking thermally at 150-200 °C in different atmospheres to form gel film to be used as microwave susceptor, intermediate baking with/without microwave showering to create more anchoring sites giving rise to dangling state, next baking up to 49O-500 °C in vacuum (10-4-10-5 mbar) to provide condensed film of pencil hardness 6H-7H close to that of glass, 9H., final baking in presence of reducing gas [Ar (95%)-H2 (5%)] at 49O--500 °C followed by the vacuum treatment from 49O--500 °C to 80100 ° C to provide ITO films of 0.70-1.5 11m physical thickness by single operation with more defect centres having low sheet resistance, 35-100 ohm/sq and 82-84% visible transmissivity.