Executive Summary : | In this proposal, we intend to study the implications of inelastic scattering and spin-dephasing mechanisms in GNR-based spintronic devices. Here, we propose to study the spintronics of MLG-based nanoribbon devices in the QH regime. Under this, various inelastic and spin-dephasing terms are to be incorporated into the MLG-based spintronic system in order to study the efficiency of such devices. The theoretical studies based on ballistic transport conditions don’t take into account the spin-polarized carrier interactions with the surroundings. However, the issue of spin precession with wide angular distribution can be a major contributor to the reduction of the device output as compared to the ballistic case. Although, the spin transport in the QH regime which is due to the counter-propagating edge states will be less susceptible to inelastic and dephasing mechanisms, still, this problem is of prime importance for the study of the actual effects of such phase-breaking processes in different length scales for spin-polarized carriers in MLG-nanoribbon based spintronic devices. Also, in-house codes for the simulation of spin-polarized transport in MLG-based nanoribbon devices will be developed. |