Executive Summary : | This research proposal aims to develop and characterize high-purity and high-efficiency single photon emitters (sPEs) in two-dimensional (2D) semiconductors, with a special emphasis on Mos2, Wse2, and hBN 2D materials. The central challenge is the production of "indistinguishable" photons with identical quantum properties, which play a pivotal role in establishing the security and efficiency of quantum cryptographic schemes and quantum computing operations. The proposed approach focuses on creating point defects within 2D materials, particularly isolated vacancies and vacancy complexes, to act as hosts for sPEs operating within the visible to near-infrared spectral range. The researchers will use precise electron irradiation, controlled doping, functionalization, steady-state photoluminescence (PL), ultrafast spectroscopy, and second order correlation measurements to characterize the created defects. The comprehensive analysis will extend through temperature variations, from cryogenic to room temperatures, combining defect engineering, sPE genesis, temperature-dependent characterization, and ultrafast dynamics analysis. This holistic approach aims to unlock the blueprint for advanced quantum communication and computing. |