Executive Summary : | Electrostatic control has the potential to control material properties such as electronic, magnetic, optical, and structural. This technology can induce unprecedented charge densities, up to an electron per unit cell, enabling dynamic control of material properties. The high induced surface carrier charge density at the semiconductor oxide and ionic liquid/gel interface can lead to dynamic reversible control of electronic transport, tuning of insulator-metal transition, superconducting transitions, phase transitions, discovery of new phases in existing materials, and determination of pristine electronics transport limits at low and high carrier densities.
The proposed research focuses on using cost-effective solution-based spin coating techniques to synthesize high-quality thin films of ultra-wide bandgap semiconductor Ga2O3. These films are dynamically tuned to control electron charge transport properties in β-Ga2O3, a material known for its wide band-gap and high electrical breakdown. The fundamental properties of β-Ga2O3 will be explored to map mobility-charge carrier density relationship, improving the understanding of mobility-limiting factors that limit device speed. The project results can be used to design cost-effective reliable thin films for high power transistors with minimal energy losses. The project also explores various dopant(s) and electrostatic induced conductivity in insulating films, aiming to understand the insulator-metal transition and establish a critical charge carrier density as a benchmark standard for future researchers. |