Executive Summary : | shifting from bulk to nano dimensions has been a focus to understand the unique properties of materials at 2D, 1D, or 0D levels, which can reduce costs and help miniaturize the size of scalable and flexible devices. Two-dimensional (2D) materials like graphene, transition-metal di-chalcogenides, perovskite monolayers, and phosphorene have potential applications in various fields. However, 2D materials with good stability, moderate band gap, ultra-low thermal conductivity, high carrier mobility, and reasonable power factor are rare. Graphene, for example, has ultrahigh carrier mobility, but its band gap absence prevents its application in suitable devices. Mos2 exhibits a moderate band gap, but this results in low carrier mobility. Black phosphorene has a moderate bandgap and high carrier mobility, enabling its application in field-effect transistors or photodetectors but easily degrades in air. Researchers are now exploring the design of new, practically synthesizable, and long-lasting nanostructured materials. Recent work on Mn doped BasnO3 nanostructures shows that transition metal doped nano particles of BasnO3 exhibit several entrusting properties, such as transparent diluted magnets semiconductor DMs, colossal magneto-dielectrics, visible light activity, and band gap & electronic conductivity tuning. Understanding these properties will be crucial for spintronic or optoelectronic applications and energy harvesting. |