Executive Summary : | The project is addressing the real problem of attaining strong tunnel magnetoresistance (TMR) signal in organic magnetic tunnel junctions (OMTJ), at room temperature (RT). OMTJ devices, with strong TMR response, may be employed in easy realization of low power, high performance, CMOS integrable, magnetic random-access memory (MRAM) devices. The OMTJ devices to be fabricated will be of the form p-Si/x/Alq?/Co/Au (x=CoFe?O? (CFO), NiFe?O? (NFO), Fe). Alq? will be used as organic spacer as it can retain conduction electron spin polarization up to 8nm thickness. Moreover, Alq? can have good metal-molecule coupling at x/Alq? and Alq?/Co interfaces resulting in spin-polarized injection/extraction from and to x/Alq? and Alq?/Co interfaces, respectively. Co will be used as spin receiving electrode as it shows considerable magnetic anisotropy thereby making them applicable for spintronics sensor and memory applications. PIs have undergone analytical modeling of x/Alq?/Co based OMTJs using Non Equilibrium Green's Function (NEGF). They have observed that FMs with good spin-polarization and electron-dominant transport will be best suited for injector FM electrode. These FMs make considerable hybrid states at FM/Alq? interface leading to spin-polarized injection process. After fitting simulated TMR responses using a phonon assisted tunneling model we have also observed that the defect states depth difference is very high between parallel and antiparallel resistances for these systems. After examining a lot of FMs we got highest TMR responses for devices with CFO, NFO and Fe as injector electrodes. Hence, we will be using them as injector FM electrodes in our experiment. The choice of such layers for the OMTJ devices will bring high RT TMR response and can easily be CMOS integrated for low power, high performance MRAM applications. |