Research

Engineering Sciences

Title :

Development of Magnetic semiconductor for Next-Generation spintronics Devices based on Transition Metal-Ion substituted Nickel Oxide

Area of research :

Engineering Sciences

Focus area :

spintronics Materials

Principal Investigator :

Mr. Pankaj Bhardwaj, Indian Institute of science, Bangalore, Karnataka

Timeline Start Year :

2024

Timeline End Year :

2026

Contact info :

Details

Executive Summary :

semiconductor spintronics is gaining attention due to its integration of conventional semiconductors for processing and computing with magnets for data storage applications. Transition metal (TM) ions can create dilute magnetic semiconductors with high electronics and photonics properties, including magnetic functionality. Magnetic semiconductors generate strong spin-dependent coupling, resulting in high curie temperature (Tc). However, limited spin-polarized charge carriers hinder functionality at high temperatures. Nickel Oxide (NiO) is a prominent candidate that fulfills both magnetic semiconductors criteria and can become a next-generation spintronics device. NiO is an antiferromagnetic p-type transparent semiconducting oxide with a high Neel temperature of 523 K and a wide optical band gap. This research proposal proposes the substitution of various ions into NiO using co-precipitation and pulsed laser deposition to investigate its structural, optical, morphological, transport, and magnetic properties for device fabrication. The outcome will have significant implications for developing new spintronics devices, such as transparent ferromagnets, solar spin photodiodes, and spin power devices.

Total Budget (INR):

Organizations involved