Executive Summary : | The proposed project aims to develop next-generation PCM devices with improved structural and electrical properties, such as van Waals-bonded layered heterostructures and low power consumption. The project will also explore electrical switching properties and novel programming techniques on superlattices. WP1 will focus on literature study on sLs based phase change memories, exploring thin film deposition of various phase change materials for sLs. Calibrations of deposition techniques, physical characterization of deposited sLs, and temperature-dependent resistivity and Hall measurement will be conducted. WP3 will focus on advanced microscopy studies, studying the local atomic arrangement of stacked layers of various phase change materials based sLs. This will help understand the reversible processes of structural reconfiguration associated with the vacancy ordering process in the deposited layered materials. WP4 will involve device fabrication and electrical characterization, focusing on iPCM devices in crossbar-type structures using metal electrodes like Pt, Cr, and Al. Comparative studies on I-V measurement, programming analysis, and reliability tests will be conducted on iPCM devices with stacked layers of different phase change materials. WP5 will investigate ultrafast characteristics and advanced programming techniques to identify low power consumption and high-speed PCM devices. These techniques will involve proper nanosecond voltage pulses with varying pulse parameters, aiming to achieve ultrafast sET and REsET processes with small pulse widths below ~10 ns. |