Executive Summary : | The objectives of this research project are to optimize metal-oxide semiconductor thin films at low temperatures, analyze their characteristics, integrate them into thin-film transistors (TFTs), analyze the electrical properties of TFTs, and fabricate TFTs on flexible/foldable substrates for display applications. To achieve the stated objectives, the research will focus on addressing existing challenges in solution-processed metal oxide TFTs. Efforts will be made to improve several key aspects, including reducing off-state current, increasing mobility, enhancing bias stress stability, and improving long-term environmental stability. These targeted improvements aim to overcome limitations and enhance the overall performance and reliability of metal oxide TFTs in display applications. The research outcomes will be based on a systematic "design of experiment" approach, enabling the achievement of metal-oxide semiconductor TFTs with high carrier mobility and excellent stability under bias stress conditions. These outcomes will validate the effectiveness of the optimization strategies employed and demonstrate the potential for utilizing metal oxide TFTs in advanced display technologies. 4.Train students in device fabrication, including thin-film transistors, characterization, and analysis, through practical experience, understanding TFT principles, and developing expertise in fabrication techniques, characterization, and analysis. |