Executive Summary : | The quest for alternative beyond-CMOS technologies has become crucial in the pursuit of next-generation electronics. 2-D material-based field-effect transistors have emerged as a promising contender due to their atomic scale thickness, bond-free surface, and low-cost fabrication. However, they face the Boltzmann tyranny limitation, which restricts subthreshold swing to 60 mV/dec. To address this, ferroelectric material-FET (FE-FET) has emerged as a potential solution, utilizing the spontaneous polarization of ferroelectric materials to modulate the conductance of a semiconductive channel. This proposal aims to explore the vast potential of 2-D FE-FETs through numerical modeling and simulation. Ferroelectric materials, known for their rich functionalities and unique gating effects, can enable high doping density, reversible, and nonvolatile modulation of channel carriers using their polarization. By harnessing the advantages of both 2-D semiconductors and ferroelectric materials, the research aims to design and optimize 2-D FE-FETs for enhanced device performance, reduced power consumption, and increased scalability. The proposed research will involve sophisticated numerical modeling techniques to understand the underlying physics and operating principles of 2-D-material-based FE-FETs. The numerical models will be validated against experimental or first principle simulation-based data to ensure accuracy and reliability. The outcomes hold great promise for advancing semiconductor technology by accelerating the design process, optimizing device parameters, and exploring novel device concepts. |